Measurement of the inversion-layer charge of a metal-insulator-semiconductor structure in a quantizing magnetic field
Pudalov V. M. , Semenchinskii S. G. , Edel'man V. S.
Under conditions corresponding to the quantum Hall effect, the charge (Qs) of the 2D layer is proportional to the gate voltage Vg in a first approximation. As the magnetic field is varied, the charge Qs (at Vg = const) or the gate potential Vg (at Qs = const) changes abruptly upon transitions of the Fermi level from one Landau level to another. The magnitude of the change corresponds to the energy splitting of the Landau levels.