Negative magnetoresistance of p-Ge in the region of the Mott hopping conductivity
Aleinikov A. B. , Vainberg V. V. , Vorobkalo F. M. , Zarubin L. I.
The magnetoresistance of p-Ge samples (NGa = 1.9X 1017 cm"3) with various degrees of compensation {K = 0.23-0.95) has been studied in the hopping-conduetivity region. In weak magnetic fields the negative magnetoresistance results from an increase in the state density near the Fermi level and appears only at a high degree of compensation, at which the Mott conductivity sets in.
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![](/ps/1305/article_19723_800_head.png "The magnetoresistance of p-Ge samples <i>(N<sub>Ga</sub> = </i>1.9X 10<sup>17</sup> cm"<sup>3</sup>) with various degrees of compensation <i>{K </i>= 0.23-0.95) has been studied in the hopping-conduetivity region. In weak magnetic fields the negative magnetoresistance results from an increase in the state density near the Fermi level and appears only at a high degree of compensation, at which the Mott conductivity sets in.")