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VOLUME 59 (1994) | ISSUE 5 | PAGE 327
Cyclotron resonance of charge carriers in strained Ge/Ge1-xSix heterostructures
The cyclotron resonance of photogenerated carriers in a strained, multilayer, undoped Ge/Gej_xSix heterostructure has been studied for the first time. The spectra of the absorption and the millimeter-range photoconductivity spectra have a line corresponding to a cyclotron resonance of carriers with an effective mass mc~0.07m0. This value corresponds to the transverse mass of holes at the bottom of the deformed quantum wells in the Ge layers. A residual photoconductivity is observed. It results from holes which remain in Ge layers after the interband illumination is turned off.