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VOLUME 59 (1994) | ISSUE 5 | PAGE 340
Quasi-1D electron channels and 2D electron gas in structures with vicinal faces of GaAs δ-doped with tin
Structures with vicinal faces of GaAs δ-doped with tin, i.e., GaAs(S-Sn) structures, have been synthesized. The anisotropy of the conductivity was studied at 0.35 < Τ < 300 К. The quantum Hall effect, the Shubnikov-de Haas effect in fields up to 5=40 T, and the negative magnetoresistance at low temperatures were also studied. The anisotropy of the conductivity and features of the quantum Hall effect are explained in terms of a coexistence of 2D electrons with a fairly high mobility and of quasi-ID electron channels in the GaAs((5-Sn) structures.