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VOLUME 59 (1994) | ISSUE 7 | PAGE 471
Localization of transverse optical phonons of GaAs in GaAsGa1-xAs periodic structures with paired quantum wells
A localization of transverse optical phonons in GaAs layers separated by ultrathin AlxGa]_^As barriers has been studied experimentally. It is shown that an AlAs layer 1 monolayer thick constitutes a barrier for GaAs phonons, while an AlxGat^xAs layer with x<0.5 is penetrable.