Wannier-Stark localization in a superlattice of hexagonal silicon carbide
Sankin V. I., Stolichnov I. A.
A negative differential resistance with threshold fields of 500, 1200, and 2000 kV/ cm and also a resonant tunneling with a threshold field of 1800 kV/cm have been observed in a hexagonal crystal with a natural 6H-SiC superlattice. Analysis of the experimental data shows that these effects can be regarded as manifestations of Wannier-Stark states with various degrees of localization. These results support the position that Wannier-Stark "ladders" exist. This position has come under doubt because of the possibility of an interband mixing of electron states by an electric field.
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![](/ps/1311/article_19896_800_head.png "A negative differential resistance with threshold fields of 500, 1200, and 2000 kV/ cm and also a resonant tunneling with a threshold field of 1800 kV/cm have been observed in a hexagonal crystal with a natural 6H-SiC superlattice. Analysis of the experimental data shows that these effects can be regarded as manifestations of Wannier-Stark states with various degrees of localization. These results support the position that Wannier-Stark "ladders" exist. This position has come under doubt because of the possibility of an interband mixing of electron states by an electric field.")