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VOLUME 35 (1982) | ISSUE 2 | PAGE 81
Detection of light-hole accumulation in p-Ge in crossed electric and magnetic fields through far-IR measurements
The onset of long-wave IR absorption and emission in strong electric fields has been observed in p-Ge. Direct optical measurements (at Л = 80-130 μχή) show that both the absorption and the emission result from transitions between upper branches of the valence band of Ge. An accumulation of light holes has been observed in crossed fields E1H. The dynamics of this accumulation has been studied.