Energy dependence of the electron angular distributions during planar channeling
Babakhanyan E. A. , Vorob'ev S. A. , Kononets Yu. V., Popov D. E.
The angular distributions of the relativistic electrons transmitted through a silicon crystal have been measured under [ 110 j-plane channeling conditions. The results reveal an alternation of "two-humped" and "three-humped" distributions as the electron energy is raised from 0.85 to 5.4 MeV. A theory is derived for the effect. The effect is shown to result from a shift of the energy bands and an unusual attendant change in the structure of the wave functions of the states above the potential barrier.
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![](/ps/1315/article_19868_800_head.png "The angular distributions of the relativistic electrons transmitted through a silicon crystal have been measured under [ 110 j-plane channeling conditions. The results reveal an alternation of "two-humped" and "three-humped" distributions as the electron energy is raised from 0.85 to 5.4 MeV. A theory is derived for the effect. The effect is shown to result from a shift of the energy bands and an unusual attendant change in the structure of the wave functions of the states above the potential barrier.")