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VOLUME 36 (1982) | ISSUE 1 | PAGE 5
Mossbauer spectra of 119Sn in the gapfree state of a semiconductor
A decrease in the probability for the Mossbauer effect by ~40% has been detected near the band-inversion point in the system of narrow-gap semiconductors (SnTe)A (PbSe), _x. This result is attributed to a structural change in the phonon spectrum due to a strong electron-phonon interaction.