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VOLUME 36 (1982) | ISSUE 8 | PAGE 290
Phase transition on stepped silicon surfaces
Phase transitions are discovered on clean silicon surfaces inclined away from (111) toward [2ΪΪ] planes. At temperatures below 850 °C, systems of ordered steps with height equal to three interplanar distances dlU9 which reform reversibly into steps with height equal to a single interplanar distance above 850 °C, form on such surfaces.