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VOLUME 36 (1982) | ISSUE 9 | PAGE 313
Tunneling of current carriers in niobium nitride junctions
The characteristics ae{V) and dae[V)/dV, where ae is the even part of the conductivity of a tunnel junction, are investigated for NbN-I-Pb and NbN-I-Ag (I is an Nb oxide) junctions in the voltage range V — (ANbN + APb)/e = 0-30 meV and V — Δ NbN /e = 0-31 meV, respectively (4№Ν and AVb are the superconducting energy gaps). The positions of peaks in the electron-phonon interaction (EPI) function are determined in the energy range 0-26 meV.