Magnetoresistance anisotropy due to the 2D-electron subsystem at a GaAs/AIGaAs interface
Volkov V. A. , Galchenkov D. V. , Grodnenskii I. M., Starostin K. V.
Effects of the coexistence of ID and 3D electrons in the structure GaAs/n-AlGaAs have been studied for the first time over the temperature range Τ = 4.2-300 К. The angular dependence of the magnetoresistance might be used as a new test of the two-dimensionality of an electron subsystem. This test would work over broad ranges of Τ and H, in contrast with the Shubnikov-de Haas effect.