Antiferromagnetic ordering of holes in doped silicon
Altukhov P.D. , El'tsov K.N., Rogachev A.A.
Polarization of the recombination radiation of Si.B in a magnetic field was studied. Antiferromagnetic ordering of holes was found in the range of acceptor concentrations nA^\X 1017-3 Χ 1018 cm "3, It is shown that at nA ~ 1 χ 1017 cm ~3 the excitons can be combined with clusters of one, two, or three impurities.
Home
![](/ps/1340/article_20230_800_head.png "Polarization of the recombination radiation of Si.B in a magnetic field was studied. Antiferromagnetic ordering of holes was found in the range of acceptor concentrations <i>n<sub>A</sub>^\X </i>10<sup>17</sup>-3 Χ 10<sup>18</sup> cm "<sup>3</sup>, It is shown that at <i>n<sub>A</sub> ~ </i>1 χ 10<sup>17 </sup>cm ~<sup>3</sup> the excitons can be combined with clusters of one, two, or three impurities.")