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VOLUME 31 (1980) | ISSUE 1 | PAGE 56
Population inversion of the spin states of Cr3+ in silicon due to unpolarized optical pumping
Population inversion of the — § <-> — \ and \ <—> \ transitions of the Cr + ion (5 = |) in silicon due to interband pumping was observed at helium temperatures. The effect can be explained by allowing for the spin-dependent capture of the current carriers and the formation of intermediate paramagnetic states.