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VOLUME 31 (1980) | ISSUE 2 | PAGE 114
Resonance excitation of Nd3+ in a single crystal of Gd2S3 semiconductor
The luminescence of Nd3+ ions in the single crystal of Cd2S3 semiconductor produced as a result of resonance laser excitation was observed for the first time. It is shown that a mechanism of impact excitation of impurity centers by the carriers in the electric field can be realized in ,4 ψ Β \l semiconductors activated by trivalent ions of the rare-earth elements.