Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 41-62
   Volumes 1-20
   Volumes 21-40
      Volume 40
      Volume 39
      Volume 38
      Volume 37
      Volume 36
      Volume 35
      Volume 34
      Volume 33
      Volume 32
      Volume 31
      Volume 30
      Volume 29
      Volume 28
      Volume 27
      Volume 26
      Volume 25
      Volume 24
      Volume 23
      Volume 22
      Volume 21
Search
VOLUME 31 (1980) | ISSUE 5 | PAGE 304
Anomalous behavior of impurity centers in Pb1-xSnxTe(Ga) alloys subjected to pressure
It was discovered that a localization of electrons at impurity centers occurs in single-crystal, Ga-doped Pbj _ x Snx Те alloys subjected to hydrostatic compression at Г= 4.2 K. In л-type alloys the Fermi level suddenly moves into the valence band with an increase in pressure.