Anomalous behavior of impurity centers in Pb1-xSnxTe(Ga) alloys subjected to pressure
Akimov B.A. , Brandt N.B. , Ryabova L.I. , Khokhlov D.R. , Chudinov S.M. , Yatsenko O.B.
It was discovered that a localization of electrons at impurity centers occurs in single-crystal, Ga-doped Pbj _ x Snx Те alloys subjected to hydrostatic compression at Г= 4.2 K. In л-type alloys the Fermi level suddenly moves into the valence band with an increase in pressure.