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VOLUME 31 (1980) | ISSUE 6 | PAGE 367
Tunnel impurity autolocalization in semiconductors. Anomalous properties of the Pb1-xSnxTe compounds with In impurity
It is shown that the appearance of autolocalized impurity states associated with the capture of an electron by an intrinsic impurity well as a result of deformation, leads to the appearance of subbarrier kinetics that account for the anomalous properties of the Pbj _xSnxTe(In) compound.