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VOLUME 60 (1994) | ISSUE 6 | PAGE 429
Magnetic resonance and anticrossing of levels of excitons trapped at opposite interfaces in type-II GaAs/AIAs superlattices
Excitons trapped at different interfaces in type-Π GaAs/AlAs superlattices have been studied selectively through optical detection of magnetic resonance. That excitons are trapped at opposite interfaces is proved unambiguously by measurements of an anticrossing of exciton levels based on the linear polarization of luminescence. Excitons characterized by exchange splittings corresponding to the trapping of an electron and a hole at points separated by a distance equal to the period of the superlattice have been detected. © 1994 American Institute of Physics.