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VOLUME 60 (1994) | ISSUE 6 | PAGE 457
Evolution of an impurity band during low-temperature application of a field to weakly compensated silicon with a high doping level
When an electric field is applied to Si:B with a boron concentration of 10 cm-3 at low temperatures, surface conduction channels form at relatively high voltages on the field electrode. The particular voltage varies with the doping level. When the Si surface becomes depleted of holes, the effect stems from the generation of a fluctuation potential due to impurity charge exchange. In the case of enrichment, in contrast, the effect stems from a filling of the upper Hubbard band under conditions of a hole-gas quantization. © 1994 American Institute of Physics.