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VOLUME 60 (1994) | ISSUE 9 | PAGE 650
Detection of the magnetization of a ferromagnetic film in a Ni/GaAs structure from the polarization of electrons of the semiconductor
It has been found that a ferromagnetic nickel film deposited on an я-GaAs surface by ion sputtering affects the polarization of optically oriented electrons in the semiconductor. The film gives rise to magnetic fields in the semiconductor which fluctuate in space. These fields stem from the domain structure of the material. The film also gives rise to a regular magnetic field, which is proportional to the magnetic moment of the film. A photoinduced change in the coercive force of a nickel film has been observed. The use of a semiconductor as a magnetization detector opens up new opportunities for monitoring the state of ferromagnetic films. © 1994 American Institute of Physics.