Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 21-40
   Volumes 1-20
   Volumes 41-62
      Volume 62
      Volume 61
      Volume 60
      Volume 59
      Volume 58
      Volume 57
      Volume 56
      Volume 55
      Volume 54
      Volume 53
      Volume 52
      Volume 51
      Volume 50
      Volume 49
      Volume 48
      Volume 47
      Volume 46
      Volume 45
      Volume 44
      Volume 43
      Volume 42
      Volume 41
Search
VOLUME 60 (1994) | ISSUE 10 | PAGE 699
Dynamics of an adsorption-induced roughening transition as a phase transition in a vacancy subsystem
This letter analyzes the dynamics of a first-order phase transition in the vacancy subsystem in a surface layer of silicon which results in a roughening transition of the silicon surface. Two possible mechanisms for the onset of supersaturation in the vacancy system are proposed. A phase diagram for the transition is found. The distribution of roughness features with respect to height and wave vector is derived. Conditions under which quasiperiodic structures appear on the surface and a stochastic roughness arises are predicted. © 1995 American Institute of Physics.