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VOLUME 31 (1980) | ISSUE 8 | PAGE 440
Free-carrier cyclotron resonance in nonuniformly deformed germanium
A nonuniform distribution of free carriers above an electron-hole drop localized in a potential well was evident from the line shape of cyclotron resonance at Τ = 4,2 К in a nonuniformly deformed Ge. The equilibrium concentration of the free carriers and the collision frequency near the surface of the drop were determined from an analysis of this shape. Estimates of the effective layer of the free carriers surrounding the drop are given.