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VOLUME 31 (1980) | ISSUE 9 | PAGE 532
Inversion of the sign of the "linear" photovoltaic effect in semiconductors
A temperature and concentration inversion of the sign of the photovoltaic effect (PVE) in semiconductors was observed. The temperature inversion is due to a change of the PVE mechanism from an intraband to an impurity mechanism. The concentration inversion is caused by a derealization of the impurity states.