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VOLUME 31 (1980) | ISSUE 12 | PAGE 723
Anomalous photoelectric effect on bound excitons in gallium phosphide
A photoelectric effect in the ANf NN3f NN4, NN5i and Am lines of bound excitons was observed in GaP p-n junctions at temperatures of40-80 K. The photoelectric response in the region of the AN line exceeded the maximum value in the intrinsic region of the spectrum.