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VOLUME 26 (1977) | ISSUE 2 | PAGE 72
Anomalous anisotropy of electron mobility in plastically deformed silicon with low dislocation density
A new mechanism is observed for the onset of anisotropy of the electric conductivity of semiconductors. It is due to the change of the state of the impurity in the internal volume of the crystal adjacent to that part of the slip plane which is swept by the dislocation in the course of the plastic deformation.