Magnetic-field-induced metal-insulator transition in 0 2Te
Tsidil'kovskii I. M., Arapov Yu. G., Davydov A. B., Zvereva M. L.
In magnetic fields higher than the threshold field Η £y a metal-insulator transition is found to occur in strongly doped, compensated semiconductors «-Hg0 8 Cd0 2 Те. The dependence of Η %y on the electron density is discussed.