Transformation of the optical phonon spectrum of silicon during bombardment by intense picosecond laser pulses
Govorkov S. V., Zadkov V. N., Koroteev N. I., Shumai I. L.
The spectra of an optical phonon in crystalline silicon have been measured at various excitation levels (up to the point at which the crystal melts) by coherent active Raman spectroscopy with picosecond pulses. The transformation of the spectra is evidence of a significant heating of the phonon subsystem and of the generation of a strong photostimulated stress over times on the order of 10 ps.