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VOLUME 44 (1986) | ISSUE 4 | PAGE 193
Scanning tunneling microscopy of the Si-SiO2 interface in a metal-insulator-semiconductor structure
The relief at the Si-Si02 interface in a high-quality metal-insulator-semiconductor structure has been studied for the first time by scanning tunneling microscopy. о Large-scale irregularities with a typical height of 10-20 A and a length of 300-600 A have been found. The scattering of electrons by these irregularities is predominant and must be considered in the corresponding theory.