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VOLUME 26 (1977) | ISSUE 6 | PAGE 429
Multiphonon cascade process and secondary radiation bands in polar semiconductors
A new type of resonant Raman scattering of light in a semiconductor exposed to light of frequency ωλ> Eg/n +(1 + те/тА) <x>L0 is predicted. The secondary radiation occupies the frequency band Q<a>s <(l-f me/mh)~x (o>/ — fi~xEg) — g>lo. It is shown that the cross section has a steplike dependence on both o>s and ω{.