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VOLUME 44 (1986) | ISSUE 11 | PAGE 513
Microwave conductivity and inverted ESR signal from new centers in oxygen-containing silicon
The microwave conductivity and ESR signal from the new centers, which correlates with the conductivity, were detected in a heat-treated oxygen-containing silicon at low temperatures. The results are interpreted in a model which takes into account the formation of precipitates with dislocation dipoles and the transfer of oxygen to the lattice sites accompanied by the formation of paramagnetic centers.