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VOLUME 44 (1986) | ISSUE 11 | PAGE 518
Metal-insulator-metal transition induced by a uniaxial strain in a gapless semiconductor Hg1-xCdxTe
A metal-insulator-metal transition is shown to occur in a uniaxially strained gapless semiconductor H1 _xCdxTe. In the absence of a strain, the metallic conductivity is determined by the free electrons and when Ρ is maximum, it is determined by the valence-band holes. A conductivity inversion is caused by a structural change in the hole spectrum.