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VOLUME 43 (1986) | ISSUE 1 | PAGE 46
Large Coulomb gap in the spectrum of localized states of Mn in amorphous Si
A Coulomb gap Δ has been detected in the energy spectrum of the localized states of Mn in amorphous Si near the metal-insulator transition. This gap was determined from the temperature dependence of the conductivity within the context of a theory developed by Shklovskii and Efros. The value of Δ was found to be more than an order of magnitude larger than the values found previously for semiconductor-impurity systems with shallow levels.