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VOLUME 43 (1986) | ISSUE 4 | PAGE 182
Metal-insulator transition in gallium antimonide caused by the disordering of the crystal structure
The metal-insulator transition in a system consisting of a single-crystalline and amorphous GaSb is studied as the content of the amorphous phase increases gradually. At TS 10 К the metal-insulator transition is accompanied by a decrease in the conductivity by a factor of 109 and its behavior is in qualitative agreement with the scaling theory.