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VOLUME 43 (1986) | ISSUE 5 | PAGE 259
Kinetics of the emission of subterahertz acoustic phonons from the phonon hot spot in GaAs crystals
In the initial stage of the existence of the phonon "hot spot," which is produced near the surface of a GaAs crystal by laser pulses with an intensity 1 mJ/mm2, the flux density of acoustic phonons with frequencies in the range 0.3-0.6 THz out of the hot spot increases slowly over time. Possible reasons for the effect are discussed.