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VOLUME 43 (1986) | ISSUE 6 | PAGE 303
Pressure-induced inversion of the Hall coefficient and the thermal emf in narrow-gap lead-tin-selenium semiconductors
The behavior of the Hall coefficient RH, the conductivity σ, the Shubnikov-de Haas effect, and the thermal emf a of the system of solid solutions Pbj _x Snx Se has been studied at T= 4.2 К at pressures up to 30 kbar. The sign of RH and a changes at P> 18 kbar. It is concluded that there is a resonant band with a />~type conductivity and that fluctuations of the bottom of the band have a strong eifect on the electron mobility in these semiconductors.