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VOLUME 43 (1986) | ISSUE 8 | PAGE 363
Electron delocalization in the 2D electron gas at a silicon (100) surface
The number of localized electrons, N{, has been studied experimentally as a function of the total concentration Ns in metal-insulator-semiconductor structures on the (100) face of silicon. The number N} is found to decrease with increasing Ns9 because of an improved screening of the potential relief by free electrons.