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VOLUME 43 (1986) | ISSUE 8 | PAGE 368
Mechanism for reversible picosecond brightening of a direct-gap semiconductor during interband absorption of intense light pulses
A brightening mechanism involving a generation and a recombination of charge carriers, both induced by a light, is proposed. A change in the saturation state during the pulse is caused by intraband absorption, which heats the carriers. The experimental results reported by Bronevoi et ah {Pis'ma Zh. Eksp. Teor. Fiz. 42, 322 (1985) [JETP Lett. 42, 395 (1985) ]} are explained.