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VOLUME 43 (1986) | ISSUE 9 | PAGE 421
Oscillations of the electron mobility in the channel of a GaAs field-effect transistor
Oscillations have been found in plots of the conductivity of the channel in a field-effect transistor versus the voltage on the Schottky gate and versus the substrate voltage at T< 15 K. The gate-channel capacitance does not oscillate as the gate voltage is varied. The oscillations are attributed to fluctuations of the hopping conductivity of a sample of small dimensions.