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VOLUME 43 (1986) | ISSUE 9 | PAGE 442
Radiative recombination at a heterojunction
A new mechanism for radiative recombination at a heterojunction has been found. This mechanism results from transitions from donors in the narrow-gap material to acceptor-like surface states. The basic characteristics of the photoluminescence band associated with this process, such as the large (15-meV) energy shift with an increase in the excitation intensity, the exponential dependence of the radiative lifetime on the spectral position, and the anomalous behavior in a magnetic field, are determined by tunneling recombination of donor-acceptor pairs at the heterojunction.