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VOLUME 43 (1986) | ISSUE 10 | PAGE 468
Strong positive magnetoresistance of the electronic inversion layer in the region of the activation conductivity
A positive exponential magnetoresistance of the electronic inversion layer has been detected on the surface of silicon in the region of activation conductivity. The resistivity increases by an order of magnitude (at temperatures in the range 1.2-4.2 K) ina70-kOe field.