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VOLUME 43 (1986) | ISSUE 10 | PAGE 480
Carrier lifetime in doped semiconductors with a very slight compensation
The carrier lifetime r has been found to be anomalously short in doped silicon (N U3a0>4X 10~2) with a compensation К = 10-3-10-5 in the temperature range T~ 4.2-20 K. The results are explained in terms of a capture of carriers by neutral centers, followed by a transition to an attractive center and recombination there.