Nonstationary energy transfer due to dynamic self-diffraction of light beams of equal frequency in semiconductors
Vinetskii V.L. , Zaporozhets I.E., Kukhtarev N.V., Matviichuk A.S., Odulov S.G., Soskin M.S.
Observation is reported and a theoretical explanation is presented of the redistribution of the energy of two coherent light beams intersecting in the interior of the semiconductor crystal having an induced phase-inhomogeneity relaxation time larger than or of the order of the duration of the light pulse.