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VOLUME 25 (1977) | ISSUE 10 | PAGE 487
Biexcitons in the emission spectrum of uniaxially deformed silicon
A new line corresponding to the radiative decay of a biexciton was observed in the emission spectrum of Si elastically deformed along the <100) axis at large excitation densities and at low temperatures. The binding energy of the biexciton is estimated at As 1.3 meV.