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VOLUME 25 (1977) | ISSUE 12 | PAGE 574
Carrier lifetime in excited states of shallow impurities in germanium
The lifetimes and densities of the carriers in excited states of donors and acceptors, as functions of the temperature and of the impurity illuminator intensity, are obtained from investigations of Ge submillimeter photoconductivity spectra due to electron transitions between the excited states of shallow impurities under nonequilibrium conditions.