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VOLUME 32 (1980) | ISSUE 1 | PAGE 22
Hall effect and photoconductivity of Pb.Sn.Te with indium
It was established from measurements of the Hall coefficient of Pbj _ x Snx Те with CIn >0.5 at.% at 4.2 < T< 300 К that In greatly increases the number of states near the bottom of the conduction band, increases the width of the forbidded band and has no significant effect on the location of the band of heavy holes. A two-minimum model, which accounts for the long-term photoconductivity relaxation and the electrical properties of the material, is proposed.