Home
For authors
Submission status

Current
Archive
Archive (English)
   Volumes 41-62
   Volumes 1-20
   Volumes 21-40
      Volume 40
      Volume 39
      Volume 38
      Volume 37
      Volume 36
      Volume 35
      Volume 34
      Volume 33
      Volume 32
      Volume 31
      Volume 30
      Volume 29
      Volume 28
      Volume 27
      Volume 26
      Volume 25
      Volume 24
      Volume 23
      Volume 22
      Volume 21
Search
VOLUME 32 (1980) | ISSUE 2 | PAGE 126
The effect of the phonon wind on the formation of electron-hole droplets in a semiconductor
It is shown that the maximum size of a large electron-hole drop in a inhomogeneously deformed semiconductor depends on the intensity of the phonon wind and the geometry of the nonuniform compression. At high intensities of the phonon wind a cloud of small droplets should form instead of a single drop.