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VOLUME 32 (1980) | ISSUE 2 | PAGE 132
The effect of indium impurities on the photoluminescence of Pb1-xSnxTe at high excitation levels
We have discovered that at high excitation levels in Fbx _ x Snx Te:In there is a wide, x-independent band in the photoluminescence spectrum with an energy at the maximum that substantially exceeds Eg(iko* ^230 meV at 80 K). We discuss the possibility that the excited levels of the indium impurity have an effect on the occurence of this band.