Light-induced electron drift in semiconductors
Skok E. M., Shalagin A. M.
The appearance of free electron drift in semiconductors is predicted for two-photon transitions (Raman scattering type) between Landau levels. An asymmetry is produced in the electron velocity distribution because of a velocity-selective radiation excitation and a difference in the electron mobilities in different Landau levels. The potential difference produced as a result of the drift, can reach a value of ~ Ю-3 V under typical conditions.