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VOLUME 32 (1980) | ISSUE 3 | PAGE 201
Light-induced electron drift in semiconductors
The appearance of free electron drift in semiconductors is predicted for two-photon transitions (Raman scattering type) between Landau levels. An asymmetry is produced in the electron velocity distribution because of a velocity-selective radiation excitation and a difference in the electron mobilities in different Landau levels. The potential difference produced as a result of the drift, can reach a value of ~ Ю-3 V under typical conditions.