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VOLUME 32 (1980) | ISSUE 5 | PAGE 380
Bremsstrahlung spectra of 1.2-GeV electrons in a silicon single crystal at an angle 0 = 1.7 x 102 radian
The radiation spectra of electrons in amorphous aluminum targets and silicon single crystals with [110] and [111] orientations were measured at an angle θ = 1.7 X 10~2 rad with respect to the electron beam. It is shown that when the axial-channeling conditions are satisfied, the intensity of the electron radiation increases by a factor of 1.5 and 1 A, respectively, as compared with the disoriented crystals.