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VOLUME 42 (1985) | ISSUE 10 | PAGE 405
Persistent photoconductivity in hydrostatically compressed, selectively doped n-AIxGa1-xAs/GaAs structures
A qualitative change in the nature of the persistent photoconductivity of n-A\XG&X __x As/GaAs structures has been detected during hydrostatic compression. At high values of Ρ ( > 8 kbar), the persistent photoconductivity disappears in the bulk Al^ Gaj x As layer, but it continues to be observed in the adjacent two-dimensional channel in the GaAs. The reason for the disappearance of the persistent photoconductivity from the A\x _ x As is the descent of L or X valleys below the bottom of the Γ minimum.